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Same model may have multiple batches, images only for reference.
SPP80N06S2L-11 Real Image
Same model may have multiple batches, images only for reference.

SPP80N06S2L-11

Part No SPP80N06S2L-11
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-220
Datasheet
SPP80N06S2L-11 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 93μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 2650pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 158W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 065973-SPP80N06S2L-11
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPP80N06S2L-11 CAD Model

Description

The Infineon Technologies 065973-SPP80N06S2L-11 is an N-channel MOSFET transistor designed for use in electronic applications. The 065973-SPP80N06S2L-11 from Infineon Technologies is an N-channel MOSFET transistor designed for use in electronic applications.

  • Power Dissipation: 158W
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 80A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 93μA
  • Maximum Rds On: 11 mOhm @ 40A, 10V
  • Package: PG-TO220-3-1
  • Mounting: Through-hole
  • Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6123 $64.4920
90+ $1.3229 $119.0610
140+ $1.2816 $179.4240
190+ $1.2402 $235.6380
245+ $1.1989 $293.7305
325+ $1.0748 $349.3100
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