The Infineon Technologies SPS03N60C3 is an N-Channel MOSFET transistor suitable for use in discrete semiconductor products.

• Drain-Source Breakdown Voltage: 650V
• Continuous Drain Current (Id): 3.2A (Tc) @ 25°C
• Maximum Rds On: 1.4 Ohm @ 2A, 10V
• Maximum Vgs(th): 3.9V @ 135μA
• Package: PG-TO251-3
• Maximum Power Dissipation: 38W (Tc)
• Gate Charge (Qg): 17nC @ 10 V
• Input Capacitance (Ciss): 400pF @ 25 V
• Temperature Range: -55°C to 150°C (TJ)
• Drive Voltage: 10V (Max Rds On, Min Rds On)
• The device has a high popularity with a balance of supply and demand status, and is suitable for use in electronic circuits as a switching or amplifying device.