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Same model may have multiple batches, images only for reference.
SPU01N60C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPU01N60C3

Part No SPU01N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 0.8A TO-251
Datasheet
SPU01N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 5nC @ 10V
Max Input Capacitance 100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 11W (Tc)
Maximum Rds On at Id,Vgs 6 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 065976-SPU01N60C3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPU01N60C3 CAD Model

Description

The Infineon Technologies SPU01N60C3 is an N-channel MOSFET transistor suitable for use in high voltage applications.

  • Drain-Source Breakdown Voltage: 650V
  • Maximum Continuous Drain Current: 800mA @ 25°C
  • Low On-Resistance: 6 ohms @ 500mA and 10V
  • Package: PG-TO251-3 case with short leads
  • Mounting: Through-hole mounting
  • Widely used in electronic circuits due to its high power dissipation capability and low input capacitance.
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,958 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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