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Same model may have multiple batches, images only for reference.
SPU02N60C3BKMA1 Real Image
Same model may have multiple batches, images only for reference.

SPU02N60C3BKMA1

Part No SPU02N60C3BKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 1.8A IPAK
Datasheet
SPU02N60C3BKMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 80μA
Max Gate Charge 12.5nC @ 10V
Max Input Capacitance 200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 117551-SPU02N60C3BKMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPU02N60C3BKMA1 CAD Model

Description

The Infineon Technologies SPU02N60C3BKMA1 is an N-Channel MOSFET with a drain-source breakdown voltage of 650V and a continuous drain current of 1.8A @ 25°C.

  • Designed for use in discrete semiconductor products and has a power dissipation of 25W (Tc).
  • Maximum gate charge: 12.5nC @ 10V
  • Maximum input capacitance: 200pF @ 25V
  • Mounted: through hole
  • Packaged: PG-TO251-3 case
  • Supply and demand status is balanced.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7276 $50.9320
170+ $0.5971 $101.5070
260+ $0.5784 $150.3840
360+ $0.5597 $201.4920
465+ $0.5411 $251.6115
620+ $0.4851 $300.7620
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Availability: 8,740 pieces
MOQ: 70 pcs
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