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Same model may have multiple batches, images only for reference.
SPU03N60S5 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPU03N60S5

Part No SPU03N60S5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3.2A TO-251
Datasheet
SPU03N60S5 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 135μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 420pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 212039-SPU03N60S5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPU03N60S5 CAD Model

Description

The Infineon Technologies 212039-SPU03N60S5 MOSFET is an N-channel power MOSFET with a drain-source breakdown voltage of 600V and a maximum continuous drain current of 3.2A @ 25°C.

  • Maximum Power Dissipation: 38W
  • Maximum Input Capacitance: 420pF @ 25V
  • Package: PG-TO251-3 case
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,230 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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