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Same model may have multiple batches, images only for reference.
SPW20N60S5FKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPW20N60S5FKSA1

Part No SPW20N60S5FKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPW20N60S5FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-1
Package / Case TO-247-3
Base Product Number SPW20N
Other Names SPW20N60S5XTIN,SPW20N60S5IN,SP000012463,SPW20N60S5INR,SPW20N60S5XTIN,SPW20N60S5IN,SPW20N60S5X,SPW20N60S5
Standard Package 240
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278342-SPW20N60S5FKSA1
Ultra Librarian 3D Model Ultra Librarian SPW20N60S5FKSA1 CAD Model

Description

The Infineon Technologies 1278342-SPW20N60S5FKSA1 is an N-channel MOSFET transistor that is a part of the CoolMOS series.

  • Power Dissipation: 208W
  • Drain-Source Voltage: 600V
  • Gate Charge: 103 nC @ 10V
  • Input Capacitance: 3000 pF @ 25V
  • Mounting Type: Through hole
  • Package Type: TO-247-3

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