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Same model may have multiple batches, images only for reference.
SPW24N60C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPW24N60C3

Part No SPW24N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 650V 24.3A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 650V 24.3A TO-247
Datasheet
SPW24N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 24.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1.2mA
Max Gate Charge 135nC @ 10V
Max Input Capacitance 3000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 240W (Tc)
Maximum Rds On at Id,Vgs 160 mOhm @ 15.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 005563-SPW24N60C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name SPW24N60C3
Introduction Date March 02, 2004
ECCN EAR99
Country of Origin Austria, China, Germany, Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SPW24N60C3 CAD Model

Description

The SPW24N60C3 is a N-channel MOSFET transistor from Infineon Technologies.

  • Package: PG-TO247-3 package
  • Mounting: Through-hole
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 24.3A
  • Rds On: 160 mOhm @ 15.4A and 10V
  • Gate Charge: 135nC @ 10V
  • Input Capacitance: 3000pF @ 25V
  • Operating Temperature Range: -55°C to 150°C
  • Power Dissipation: 240W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Ideal for: Applications such as power supplies, motor control, and lighting

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104+ $2.8889 $300.4456
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