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SPW47N60C3 Infineon Technologies SPW47N60C3 Real Image SPW47N60C3 real image6441 SPW47N60C3 Real Image1 SPW47N60C3 Real Image2
SPW47N60C3 Infineon Technologies SPW47N60C3 Real Image SPW47N60C3 real image6441 SPW47N60C3 Real Image1 SPW47N60C3 Real Image2
Same model may have multiple batches, images only for reference.

SPW47N60C3

Part No SPW47N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 47A TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 2.7mA
Max Gate Charge 320nC @ 10V
Max Input Capacitance 6800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 415W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 086810-SPW47N60C3
Family Name SPW47N60C3
Introduction Date July 25, 2002
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPW47N60C3 CAD Model

Description

The Infineon Technologies SPW47N60C3 is an N-Channel MOSFET with a drain-source breakdown voltage of 650V and a continuous drain current of 47A @ 25°C.

  • Designed for: Discrete semiconductor products
  • Power Dissipation: 415W (Tc)
  • Maximum Gate Charge: 320nC @ 10V
  • Maximum Input Capacitance: 6800pF @ 25V
  • Mounting: Through hole
  • Package: PG-TO247-3 case
  • Supply and Demand Status: Balanced

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