The TK39J60W5 is a 600V, 39A N-channel power MOSFET from Toshiba Semiconductor and Storage. This device is designed for high-efficiency power switching applications. It is part of Toshiba's advanced power MOSFET family and offers a combination of low on-resistance and fast switching speeds.

Applications

• Power factor correction (PFC) circuits
• Switch-mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• AC-DC power supplies
• DC-DC converters
• Motor control

Features

• V<sub>DSS: 600V
• I<sub>D: 39A
• R<sub>DS(on) (Max): 0.079 Ω @ V<sub>GS = 10V
• Low gate charge
• High avalanche ruggedness
• Fast switching speed
• TO-247 package for enhanced thermal performance

Benefits

• High Efficiency: Low on-resistance minimizes conduction losses, leading to higher energy efficiency in power conversion.
• Reliable Performance: High avalanche ruggedness ensures device stability and robustness under voltage stress conditions.
• Simplified Thermal Management: The TO-247 package facilitates effective heat dissipation, enabling operation at higher power levels.
• Fast Switching: Reduced gate charge contributes to faster switching speeds, minimizing switching losses and improving overall system performance.
• Compact and Robust Design: The device provides a balance between current handling capability and package size.

Technical Specifications

The TK39J60W5 has a drain-source voltage (V<sub>DSS) of 600V and a continuous drain current (I<sub>D) of 39A. The maximum on-resistance (R<sub>DS(on)) is 0.079 Ω at a gate-source voltage (V<sub>GS) of 10V. The gate charge (Q<sub>g) is low, contributing to fast switching. The MOSFET operates over a temperature range of -55°C to +150°C. Refer to the datasheet for specific pulse current and power dissipation values, as well as detailed thermal resistance characteristics.