The GT28F016B3TA110 is a 16-megabit (2MB) Parallel Flash Memory device manufactured by Intel. It is organized as 2,097,152 x 8 bits and is designed for applications requiring non-volatile storage with fast read access times.

Applications:

• Embedded Systems: Used for storing boot code, operating systems, and application data in embedded systems.
• Industrial Control Systems: Provides non-volatile memory for configuration data and program storage in industrial equipment.
• Networking Equipment: Employed in routers, switches, and other network devices for storing firmware and configuration settings.
• Consumer Electronics: Used in devices like digital cameras, MP3 players, and other portable devices for storing data and program code.

Features:

• 16-Megabit Density: Provides 2MB of non-volatile storage capacity.
• Parallel Interface: Supports a parallel data bus for fast data access.
• Fast Read Access Time: Offers a read access time of 110ns (as indicated by the "110" in the part number).
• Sector Erase: Allows for selective erasure of memory sectors.
• Low Power Consumption: Designed for low power operation.

Benefits:

• Non-Volatile Storage: Retains data even when power is removed.
• Fast Read Access: Enables quick retrieval of stored data.
• Flexible Erase Options: Sector erase allows for efficient memory management.
• Wide Operating Voltage Range: Compatible with a variety of system voltages.

Additional Details:

The GT28F016B3TA110 is available in a variety of packages, including TSOP (Thin Small Outline Package). It is typically programmed using dedicated flash memory programmers or through in-system programming (ISP) techniques. The datasheet contains detailed information on programming algorithms, timing specifications, and electrical characteristics. Care should be taken to protect the device from electrostatic discharge (ESD) during handling and programming. The specific temperature grade and voltage requirements should be verified in the datasheet.