The TE28F800B3T120 is an 8-Mbit (1M x 8) Flash memory device manufactured by Intel. It is part of the StrataFlash Embedded Memory family, offering a combination of high density and performance for embedded applications.

Applications

• Embedded systems requiring non-volatile memory
• Networking equipment for storing configuration data and boot code
• Wireless communication devices for storing firmware
• Industrial control systems for program storage
• Consumer electronics such as digital cameras and MP3 players

Features

• 8-Mbit (1M x 8) Flash memory
• High-performance read operations
• Fast programming and erase times
• CMOS process technology for low power consumption
• Sector architecture for flexible memory management
• x8 data bus width
• Operating Voltage: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Package: 48-Pin TSOP

Benefits

• Enables storage of code and data in a single memory device
• Provides quick access to data, improving system performance
• Reduces power consumption, extending battery life in portable devices
• Simplifies memory management and allows for efficient memory usage
• Facilitates easy integration into various embedded systems

Additional Details

The TE28F800B3T120 utilizes a sector architecture, dividing the memory array into smaller, independently erasable sectors. This allows for efficient memory management and reduces the time required for erase operations. The device supports various programming algorithms to optimize write performance. It also features a low-power standby mode to minimize power consumption when the device is not actively being accessed. This memory device is suitable for applications requiring reliable non-volatile storage and high performance in a compact package. The part is obsolete, so consider any replacements carefully.