The IR2085SPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.

Applications:

• Motor Control: Driving MOSFETs or IGBTs in motor control applications.
• Power Supplies: Used in high-voltage power supplies to drive switching elements.
• HID Ballasts: Control circuits for high-intensity discharge (HID) lamps.
• Induction Heating: Power switching in induction heating systems.
• Welding Power Supplies: Used to drive power devices in welding equipment.

Features:

• Floating Channel Designed for Bootstrap Operation: Allows driving N-channel MOSFETs/IGBTs in high-side configuration.
• Gate Drive Supply Range from 10 V to 20 V: Provides flexibility in power supply design.
• Logic Input Compatibility: Compatible with 3.3V, 5V and 15V logic levels.
• Matched Propagation Delay for Both Channels: Simplifies design and improves performance in high-frequency applications.
• High Pulse Current Buffer Stage: Minimizes driver cross-conduction for efficient operation.
• Under-Voltage Lockout for Both Channels: Prevents MOSFET/IGBT damage during low voltage conditions.
• CMOS Schmitt-triggered Inputs with Pull-down: Improves noise immunity.

Benefits:

• Simplified High-Side Driving: Enables efficient control of high-side MOSFETs/IGBTs.
• Robust Performance: Reliable operation in harsh environments.
• Increased Efficiency: Minimizes power losses due to driver cross-conduction.
• Enhanced System Reliability: Under-voltage lockout protects power devices.
• Improved Noise Immunity: CMOS Schmitt-triggered inputs reduce susceptibility to noise.
• Reduced Design Complexity: Matched propagation delays simplify circuit design.

Additional Details:

The IR2085SPBF driver IC is available in a standard SOIC package. It is designed for applications requiring high-voltage and high-speed switching. The bootstrap operation allows for a simplified high-side drive configuration, reducing the need for additional components. The under-voltage lockout feature protects the driven MOSFET/IGBT from damage during start-up or low-voltage conditions. The IR2085SPBF provides a robust and efficient solution for driving power MOSFETs and IGBTs in a variety of applications.