The IR21141SS is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Applications:

• Motor control (e.g., BLDC motor drives, servo motor drives)
• Power supplies (e.g., half-bridge converters, full-bridge converters)
• Lighting ballast (e.g., HID lamp ballasts, LED drivers)
• Induction heating
• Welding power supplies

Features:

• Floating channel designed for bootstrap operation: Simplifies high-side gate drive.
• Gate drive supply range from 10V to 20V: Provides flexibility in power supply selection.
• Logic input compatible with standard CMOS or LSTTL outputs: Eases interfacing with microcontrollers and other logic devices.
• Matched propagation delay for both channels: Simplifies dead-time control and reduces switching losses.
• High pulse current capability: Enables fast switching of power MOSFETs and IGBTs.
• Undervoltage lockout for both channels: Protects the power switches from damage due to insufficient gate drive.
• CMOS Schmitt-triggered inputs with pull-down: Improves noise immunity.

Benefits:

• Simplified high-side gate drive: Reduces component count and simplifies circuit design.
• Improved efficiency: Fast switching and low propagation delay minimize switching losses.
• Enhanced system reliability: Undervoltage lockout protects power switches from damage.
• Reduced EMI: Matched propagation delay minimizes ringing and overshoot.
• Increased design flexibility: Wide gate drive supply range accommodates various power switch requirements.

Additional Details:

The IR21141SS is typically packaged in a surface-mount SOIC package. It requires external bootstrap capacitors and gate resistors for proper operation. Careful PCB layout is essential to minimize parasitic inductance and capacitance. Refer to the International Rectifier (now Infineon Technologies) datasheet for detailed electrical characteristics, timing specifications, application notes, and PCB layout recommendations. The high-side floating channel allows for driving N-channel MOSFETs in a high-side configuration, which simplifies the design of half-bridge and full-bridge converters. The device is designed to withstand high dv/dt, which is important in switching power applications.