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IRF1059T1

Part No IRF1059T1
Manufacturer International Rectifier
Catalog Hard To Find
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 06+
Reference case TO-220
Manufacturer INTERNATIONAL RECTIFIER
Manufacturer Homepage www.irf.com
Win Source Part Number 710481-IRF1059T1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1059T1 CAD Model

Description

The IRF1059T1 is a power MOSFET from International Rectifier (now Infineon Technologies). It is an N-channel MOSFET designed for high-efficiency power switching applications. Known for its low on-resistance and fast switching capabilities, it's frequently used in various power management circuits.

Applications

  • DC-DC Converters: Used in synchronous rectification and other DC-DC converter topologies.
  • Motor Control: Employed in motor control circuits for efficient switching.
  • Power Inverters: Suitable for power inverters converting DC to AC.
  • Load Switching: Controlling power distribution to various loads.
  • Power Supplies: Used in various power supply applications for efficient switching.

Features

  • N-Channel MOSFET: Enables efficient switching in N-channel configurations.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses, improving overall efficiency.
  • Fast Switching Speed: Reduces switching losses and enables high-frequency operation.
  • High Drain-Source Voltage (VDS): Supports high voltage applications.
  • High Drain Current (ID): Handles substantial current loads.
  • Surface Mount Package: Simplifies PCB assembly with surface mount technology.
  • Avalanche Rated: Withstands transient voltage spikes from inductive loads.

Benefits

  • High Efficiency: Low RDS(on) and fast switching speed minimize power losses.
  • Compact Design: Surface mount package facilitates compact designs.
  • Robust Performance: Avalanche rating enhances robustness in inductive load applications.
  • Improved Thermal Performance: Low on-resistance contributes to reduced heat generation.

Additional Details

The IRF1059T1 needs an appropriate gate drive voltage to switch effectively. The gate drive voltage should be within the datasheet's specified range for proper function. Consult the datasheet for detailed electrical characteristics, recommended operating conditions, thermal resistance, and package dimensions. This MOSFET's low on-resistance and high current capability make it suitable for high-performance power switching applications. The package is typically a D2PAK or similar power surface mount package.

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