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IRF1405L

Part No IRF1405L
Manufacturer International Rectifier
Catalog Transistors - FETs, MOSFETs - RF
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A⑥)
Sample
Rohs State rohs
ECAD Module
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Manufacturer INTERNATIONAL RECTIFIER
Win Source Part Number 1186902-IRF1405L
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF1405L CAD Model

Description

The IRF1405L is an N-channel power MOSFET manufactured by International Rectifier. It's designed for high-current, high-speed switching applications, excelling in areas like DC-DC converters, motor control, and high-efficiency power inverters. The 'L' in the part number often indicates a logic-level gate drive requirement, making it compatible with lower voltage logic circuits.

Applications:

  • DC-DC Converters: Used in voltage regulation and power conversion circuits.
  • Motor Control: Employed in controlling the speed and direction of DC motors in various applications.
  • High-Efficiency Power Inverters: Used in inverters to convert DC to AC power with minimal energy loss.
  • Synchronous Rectification: Implemented in synchronous rectification circuits for improved efficiency.
  • Battery Management Systems (BMS): Used for switching and controlling power flow in battery-powered devices.

Features:

  • N-Channel MOSFET: Offers efficient switching characteristics.
  • Logic-Level Gate Drive: Compatible with lower voltage logic circuits, simplifying the design.
  • Low On-Resistance (RDS(on)): Minimizes power loss during conduction, improving efficiency.
  • High Current Capability: Designed to handle large currents.
  • Fast Switching Speed: Enables high-frequency operation.
  • Through-Hole Package (TO-220AB): Facilitates easy mounting and heatsinking.

Benefits:

  • Increased Efficiency: Low RDS(on) reduces power dissipation, leading to higher efficiency.
  • Simplified Design: Logic-level gate drive simplifies interfacing with microcontrollers and other logic devices.
  • High Power Density: Capable of handling significant power in a relatively small package.
  • Improved Thermal Performance: TO-220AB package allows for efficient heat dissipation.
  • Enhanced Reliability: Robust design ensures reliable operation in demanding applications.

Additional Details:

The IRF1405L typically features a drain-source voltage (Vds) rating of around 55V and a continuous drain current (Id) rating of approximately 160A. The gate threshold voltage (Vgs(th)) is designed to be compatible with logic-level signals, typically below 4V. The TO-220AB package is a standard through-hole package that allows for easy mounting to a heatsink to dissipate heat. When using the IRF1405L, it's essential to provide adequate gate drive voltage and current to ensure proper switching performance. A gate resistor is often used to limit the gate current and prevent ringing. Proper heatsinking is crucial to maintain the device within its operating temperature range and ensure long-term reliability. Always refer to the datasheet for specific electrical characteristics, thermal resistance, and safe operating area.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.5983 $59.7779
31+ $3.7731 $116.9661
48+ $3.6551 $175.4448
66+ $3.5372 $233.4552
85+ $3.4193 $290.6405
114+ $3.0656 $349.4784
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Availability: 9,500 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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