The IRF3415 is an N-channel power MOSFET from International Rectifier. It is designed for high-current, high-speed switching applications. This MOSFET offers excellent on-state resistance and gate charge, contributing to efficient power conversion in various electronic circuits.

Applications:

• High-frequency DC-DC converters
• Uninterruptible power supplies (UPS)
• Motor control circuits
• Synchronous rectification
• Power inverters

Features:

• N-Channel MOSFET
• High Current Capability: Up to 33A
• Low On-Resistance: RDS(on) = 0.045 Ohms at VGS = 10V
• Fast Switching Speed
• Avalanche Energy Rated
• Simple Drive Requirements

Benefits:

• Improved efficiency in power conversion due to low on-resistance
• Higher power density enabled by its high current capability
• Reduced switching losses due to fast switching speed
• Enhanced reliability through avalanche energy rating
• Simplified design with simple drive requirements

Additional Details:

The IRF3415 is typically supplied in a TO-220 package, facilitating efficient heat dissipation. It has a drain-source voltage (VDS) rating of 150V and a gate-source voltage (VGS) rating of ±20V. The device's maximum power dissipation is 160W. The operating junction temperature range is -55°C to +175°C. Its robust design makes it suitable for demanding industrial and automotive applications where reliable power switching is essential. The gate threshold voltage is typically around 4V. It is RoHS compliant.