The IRFR3518 is a power MOSFET from International Rectifier. It is designed for high-efficiency power switching applications. This device utilizes advanced HEXFET power MOSFET technology, which achieves very low on-resistance and gate charge. The result is efficient and reliable switching in a variety of power control circuits.

Applications

• DC-DC converters
• Power inverters
• Motor control
• Synchronous rectification
• High-frequency switching applications

Features

• Advanced HEXFET power MOSFET technology
• Low on-resistance (RDS(on))
• Fast switching speed
• Dynamic dv/dt rating
• Repetitive avalanche rated
• Simple drive requirements
• Lead-Free

Benefits

• Improved energy efficiency due to low RDS(on)
• Reduced power losses
• Enhanced system reliability
• Simplified thermal management
• Higher power density

Additional Details

The IRFR3518 is an N-channel MOSFET housed in a D-PAK (TO-252) package, making it suitable for surface mount assembly. Its low on-resistance minimizes conduction losses, leading to improved overall system efficiency. It also features a fast switching speed to minimize switching losses in high-frequency applications. The device is avalanche rated, providing added robustness and reliability. The gate threshold voltage is relatively low, allowing for simple drive circuit implementation.

Key Specifications:

• Vds (Drain-Source Voltage): 80V
• Ids (Continuous Drain Current): 22A
• Rds(on) (Drain-Source On-Resistance): 0.045 Ohms @ Vgs=10V
• Qg (Total Gate Charge): 23nC @ Vgs=10V
• Package: D-PAK (TO-252)