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IRS2108

Part No IRS2108
Manufacturer International Rectifier
Description HALF-BRIDGE DRIVER
Sample
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ECAD Module
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Manufacturer INTERNATIONAL RECTIFIER
Win Source Part Number 1188744-IRS2108
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRS2108 CAD Model

Description

The IRS2108 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.

Applications:

  • Motor control: Used in driving MOSFETs or IGBTs in motor control applications, such as inverters for driving AC motors.
  • Power supplies: Employed in switch-mode power supplies (SMPS) and DC-DC converters to drive the switching elements.
  • Lighting: Used in electronic ballasts for fluorescent lamps and LED drivers.
  • Induction heating: Driving the power devices in induction heating systems.
  • Welding equipment: Control of MOSFETs/IGBTs in welding inverters.

Features:

  • Floating channel designed for bootstrap operation: Allows for simple high-side gate drive implementation.
  • Tolerant to negative transient voltage, dV/dt immune: Provides robust operation in noisy power electronic environments.
  • Gate drive supply range from 10 V to 20 V: Wide operating voltage range for the gate drive.
  • Undervoltage lockout for both channels: Prevents MOSFET/IGBT from operating in the linear region during startup or low voltage conditions.
  • Matched propagation delay for both channels: Ensures precise timing for efficient switching.

Benefits:

  • Simplified gate drive design: Integrated features like bootstrap operation and undervoltage lockout reduce external component count.
  • Improved system efficiency: Fast switching speeds and matched propagation delays minimize switching losses.
  • Enhanced reliability: Robust design with negative transient voltage tolerance and dV/dt immunity ensures stable operation.
  • Protection of power devices: Undervoltage lockout protects MOSFETs/IGBTs from damage due to low gate drive voltage.
  • Versatile application: Suitable for a wide range of power electronic applications.

The IRS2108 typically comes in a DIP or SOIC package. It requires external bootstrap components (diode and capacitor) for high-side gate drive. Proper PCB layout is crucial to minimize noise and ensure stable operation. Datasheets provide detailed information on electrical characteristics, timing diagrams, and application notes. It is important to consider maximum voltage and current ratings when designing with this driver.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0510 $52.5500
120+ $0.8624 $103.4880
180+ $0.8354 $150.3720
250+ $0.8085 $202.1250
320+ $0.7815 $250.0800
430+ $0.7007 $301.3010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,140 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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