The IS61WV12816EDBLL-8TLI is a high-speed, low-power synchronous static random-access memory (SSRAM) from ISSI (Integrated Silicon Solution Inc.). This memory chip features a 128K x 16-bit organization, providing a total memory capacity of 2 Megabits. It is designed for applications requiring fast data access and low power consumption, making it suitable for various embedded systems and high-performance computing devices.

Applications:

• Networking equipment (routers, switches)
• Telecommunications systems
• Industrial control systems
• Medical devices
• Automotive electronics
• High-performance embedded systems

Features:

• High-speed synchronous operation: 133 MHz clock frequency
• Low power consumption: Active current 120mA (typical), standby current 10mA (typical)
• 128K x 16-bit organization
• Single 3.3V power supply
• LVTTL-compatible inputs and outputs
• Byte Write (BW) control
• Global Write enable
• ZZ mode for automatic power-down
• Available in a 48-ball FBGA package

Benefits:

• Fast data access: Synchronous operation enables high-speed data transfer.
• Low power consumption: Reduces overall system power requirements, suitable for battery-powered applications.
• High memory capacity: 2 Megabits of memory in a compact package.
• Easy integration: LVTTL-compatible I/O simplifies interfacing with other system components.
• Reliable operation: Designed for robust performance in demanding environments.

Additional Details:

The IS61WV12816EDBLL-8TLI operates from a single 3.3V power supply. The device supports byte write operations, allowing for flexible data manipulation. The ZZ mode provides automatic power-down functionality when the device is deselected, further reducing power consumption. The operating temperature range is -40°C to +85°C. It is offered in a 48-ball Fine-Pitch Ball Grid Array (FBGA) package for efficient board-level assembly.