The ISSI IS62C256-25TI is a high-speed, low-power 32,768 x 8-bit (256K) CMOS Static RAM (SRAM). This SRAM is designed for applications requiring fast access times and low power consumption, making it suitable for portable devices, embedded systems, and battery-backed applications.

Applications

• Embedded Systems: Used in embedded control systems for storing program code and data that require rapid access.
• Industrial Automation: Employed in industrial controllers and programmable logic controllers (PLCs) for temporary data storage.
• Medical Devices: Integrated into medical instruments for storing patient data and device settings temporarily.
• Networking Equipment: Utilized in routers, switches, and network interface cards for packet buffering and configuration data.
• Portable Devices: Suitable for battery-powered portable devices due to its low power consumption.

Features

• Fast Access Time: Boasts a fast access time of 25ns, enabling quick data retrieval and storage.
• Low Power Consumption: Designed for low power operation, extending battery life in portable applications.
• Single 5V Power Supply: Operates on a single 5V power supply, simplifying system design.
• TTL Compatible Inputs and Outputs: Compatible with standard TTL logic levels, simplifying interface design with microcontrollers and other logic devices.
• Three-State Output: Features a three-state output, allowing for easy memory expansion and bus sharing in larger systems.

Benefits

• High-Speed Operation: Enables quick data access, enhancing system performance and responsiveness.
• Energy Efficiency: Minimizes power consumption, extending battery life and reducing heat generation.
• Easy Integration: Simplifies integration with various systems thanks to its TTL compatibility and three-state output.
• Versatile Application: Suitable for a wide range of applications requiring high-speed and low-power memory.
• Reliable Performance: Provides reliable and stable operation in diverse operating conditions.

Additional Details

The IS62C256-25TI is typically packaged in a 28-pin SOJ or DIP package. It features chip enable (CE) and output enable (OE) control signals for precise memory control. It operates over a commercial temperature range (0°C to +70°C). The SRAM cell design is optimized for both high speed and low power consumption.