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Same model may have multiple batches, images only for reference.
CPC5603CTR IXYS
Same model may have multiple batches, images only for reference.

CPC5603CTR

Part No CPC5603CTR
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 415V 5MA SOT-223
Datasheet
CPC5603CTR Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 415V
Continuous Drain Current at 25°C 5mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) -0.35V
Max Input Capacitance 300pF @ 0V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 14 Ohm @ 50mA, 350mV
Temperature Range - Operating -40°C to 85°C (TA)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1030007-CPC5603CTR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian CPC5603CTR CAD Model

Description

The IXYS MOSFET, with a depletion mode FET feature, is a N-channel transistor that is used in a variety of applications.

  • Feature: Depletion mode FET
  • Channel Type: N-channel
  • Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 415V
  • Continuous Drain Current: 5mA (Ta) @ 25°C
  • Rds On @ Id,Vgs: 14 Ohm @ 50mA, 350mV
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 300pF @ 0V
  • Package: SOT-223
  • Operating Temperature: -40°C to 85°C (TA)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1142 $50.1390
110+ $0.9143 $100.5730
170+ $0.8857 $150.5690
235+ $0.8571 $201.4185
305+ $0.8286 $252.7230
405+ $0.7428 $300.8340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 147 pieces
MOQ: 45 pcs
Order Increment : 1000 pcs
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