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Same model may have multiple batches, images only for reference.
IXA45IF1200HB Real Image
Same model may have multiple batches, images only for reference.

IXA45IF1200HB

Part No IXA45IF1200HB
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 78A 325W TO247 / IGBT PT 1200 V 78 A 325 W Through Hole TO-247AD
Datasheet
IXA45IF1200HB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr IXYS
Package Tube
Product Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 78 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Power - Max 325 W
Switching Energy 3.8mJ (on), 4.1mJ (off)
Input Type Standard
Gate Charge 106 nC
Test Condition 600V, 35A, 27Ohm, 15V
Reverse Recovery Time (trr) 350 ns
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXA45IF1200
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 876051-IXA45IF1200HB
Ultra Librarian 3D Model Ultra Librarian IXA45IF1200HB CAD Model

Description

The IXA45IF1200HB is a PT type IGBT (Insulated Gate Bipolar Transistor) designed for use in Discrete Semiconductor Products, specifically in Transistors - IGBTs - Single IGBTs.

  • Power - Max: 325 W
  • Reverse Recovery Time (trr): 350 ns
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 78 A
  • Gate Charge: 106 nC
  • Mounting Type: Through Hole
  • Package/Case: TO-247-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.6714 $68.3570
11+ $11.2176 $123.3936
16+ $10.8671 $173.8736
22+ $10.5165 $231.3630
29+ $10.1660 $294.8140
39+ $9.1143 $355.4577
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Availability: 2,210 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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