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IXBF9N160G

Part No IXBF9N160G
Manufacturer IXYS
Catalog IGBTs - Arrays
Description IGBT 1600V 7A 70W I4PAC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1308587-IXBF9N160G
Category Discrete Semiconductor Products>Transistors >IGBTs Single
Manufacturer IXYS
Packaging  Tube
Part Status Active
Voltage - Collector Emitter Breakdown (Max) 1600 V
Current - Collector (Ic) (Max) 7 A
Vce(on) (Max) @ Vge, Ic 7V @ 15V, 5A
Power - Max 70 W
Input Type Standard
Gate Charge 34 nC
Ultra Librarian 3D Model Ultra Librarian IXBF9N160G CAD Model

Description

  • High Voltage BIMOSFETTM  substitute for high voltage MOSFETs with significantly lower voltage drop  MOSFET compatible control 10 V turn on gate voltage fast switching for high frequency operation reverse conduction capability
  • isolated back surface<br />enlarged creepage towards heatsink  enlarged creepage between high voltage pins application friendly pinout high reliability industry standard outline

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