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IXDN75N120

Part No IXDN75N120
Manufacturer IXYS
Catalog IGBTs - Modules
Description IGBT MOD 1200V 150A 660W SOT227B
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr IXYS
Package Tube
Product Status Active
IGBT Type NPT
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 150 A
Power - Max 660 W
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 75A
Current - Collector Cutoff (Max) 4 mA
Input Capacitance (Cies) @ Vce 5.5 nF @ 25 V
Input Standard
NTC Thermistor No
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Supplier Device Package SOT-227B
Base Product Number IXDN75
Standard Package 10 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 847079-IXDN75N120
Ultra Librarian 3D Model Ultra Librarian IXDN75N120 CAD Model

Description

The IXDN75N120 is a high-power IGBT module designed for various applications in the field of discrete semiconductor products. It belongs to the category of Transistors - IGBTs and features a single configuration.

  • Power: 660 W
  • Voltage Breakdown: 1200 V
  • Maximum Collector Current: 150 A
  • Input Type: Standard
  • IGBT Type: NPT
  • Mounting Type: Chassis Mount
  • Package: SOT-227-4, miniBLOC
  • Operating Temperature: -40°C to 150°C
  • Manufacturer: IXYS
  • REACH Affected: No

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $25.2125 $75.6375
6+ $20.6872 $124.1232
9+ $20.0404 $180.3636
12+ $19.3936 $232.7232
16+ $18.7480 $299.9680
21+ $16.8087 $352.9827
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,997 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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