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IXFA56N30X3

Part No IXFA56N30X3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 56A TO263AA  /  N-Channel 300 V 56A (Tc) 320W (Tc) Surface Mount TO-263 (IXFA)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Ultra X3
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3.75 nF @ 25 V
Power Dissipation (Max) 320W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (IXFA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXFA56
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1001477-IXFA56N30X3
Ultra Librarian 3D Model Ultra Librarian IXFA56N30X3 CAD Model

Description

The IXFA56N30X3 is a N-Channel MOSFET transistor manufactured by IXYS.

  • Drain to Source Voltage (Vdss): 300 V
  • Continuous Drain Current (Id): 56A (Tc) @ 25°C
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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