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Same model may have multiple batches, images only for reference.
IXFA7N80P IXYS
Same model may have multiple batches, images only for reference.

IXFA7N80P

Part No IXFA7N80P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 7A TO263
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.44Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1890 pF @ 25 V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA (IXFA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXFA7N80
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378700-IXFA7N80P
Ultra Librarian 3D Model Ultra Librarian IXFA7N80P CAD Model

Description

The IXYS IXFA7N80P is an N-Channel MOSFET transistor with a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 7A.

  • Vdss: 800V
  • Id: 7A
  • Temperature Range: -55°C to 150°C
  • Rds On: 1.44Ohm @ Vgs=10V, Id=3.5A
  • Qg: 32nC @ Vgs=10V
  • Package: TO-263-3 (D²Pak)
  • Mounting Type: Surface Mount
  • Power Dissipation: 200W

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2740 $58.9320
43+ $2.6865 $115.5195
67+ $2.6024 $174.3608
92+ $2.5185 $231.7020
119+ $2.4345 $289.7055
159+ $2.1827 $347.0493
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Availability: 295 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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