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Same model may have multiple batches, images only for reference.
IXFB100N50Q3 Real Image
Same model may have multiple batches, images only for reference.

IXFB100N50Q3

Part No IXFB100N50Q3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 100A PLUS264  /  N-Channel 500 V 100A (Tc) 1560W (Tc) Through Hole PLUS264™
Datasheet
IXFB100N50Q3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Q3 Class
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 49mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 255 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 13800 pF @ 25 V
Power Dissipation (Max) 1560W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS264™
Package / Case TO-264-3, TO-264AA
Base Product Number IXFB100
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -IXFB100N50Q3
Standard Package 25
Win Source Part Number 1193723-IXFB100N50Q3
Ultra Librarian 3D Model Ultra Librarian IXFB100N50Q3 CAD Model

Description

The IXFB100N50Q3 is a HiPerFET™ Q3 Class N-channel MOSFET transistor with a drain to source voltage (Vdss) of 500 V and a continuous drain current (Id) of 100A (Tc) @ 25°C.

  • Maximum Rds On: 49mOhm @ 50A and 10V
  • Gate Charge (Qg): 255 nC @ 10V
  • Input Capacitance (Ciss): 13800 pF @ 25V
  • Package: TO-264-3/TO-264AA
  • Supplier Device Package: PLUS264™
  • Mounting Type: Through-Hole
  • Operating Temperature Range: -55°C to 150°C (TJ)

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