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MJ11021G

Part No MJ11021G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Complementary Darlington Silicon Power Transistors
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tray
Transistor Type PNP - Darlington
Current - Collector (Ic) (Maximum) 15A
Voltage - Collector Emitter Breakdown (Maximum) 250V
Vce Saturation (Maximum) @ Ib, Ic 3.4V @ 150mA, 15A
Current - Collector Cutoff (Maximum) 1mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 400 @ 10A, 5V
Power - Max 175W
Operating Temperature Range -65°C ~ 200°C (TJ)
Mounting Style Through Hole
Package TO-204AA, TO-3
Manufacturer Package TO-3
Win Source Part Number 1223556-MJ11021G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name MJ11021
Introduction Date August 31, 1995
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian MJ11021G CAD Model

Description

Product Overview: ON Semiconductor MJ11021G

The MJ11021G is a high-power bipolar transistor brought to you by ON Semiconductor, a leading supplier in the semiconductor industry. This silicon power transistor is designed for high-speed, high-current applications, making it an ideal choice for power amplification and switching. The MJ11021G is part of ON Semiconductor's extensive portfolio of transistors that are recognized for their reliability and performance.

Key Features

  • High Collector-Emitter Voltage (VCEO): The MJ11021G is capable of handling a collector-emitter voltage of up to 250V, allowing for robust performance in various circuit configurations.
  • High Collector Current: With a continuous collector current (IC) rating of 30A, this transistor can easily manage high current loads, making it suitable for demanding applications.
  • Low Saturation Voltage: The device is engineered to have low collector-emitter saturation voltage, which translates to higher efficiency and reduced power losses during operation.
  • Complementary PNP Type Available: ON Semiconductor offers a complementary PNP type, the MJ11022G, enabling the use of push-pull configurations and simplifying design processes for balanced amplification stages.
  • TO-3 Package: The transistor comes in a robust TO-3 metal case that provides excellent heat dissipation characteristics, essential for maintaining stability and extending the life of the device under high-power conditions.

Applications

The MJ11021G is widely used across various applications that require high-speed switching and high-power amplification. Some of the typical applications include:

  • Linear and Switching Industrial Equipment
  • Power Regulators and Converters
  • Motor Controls
  • Audio Amplifiers
  • Pulse Width Modulated (PWM) Systems

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The MJ11021G transistor is subject to rigorous testing and quality control procedures to ensure it meets the industry standards for performance and reliability. With its robust construction and proven design, the MJ11021G is a dependable component for any high-power electronic system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $9.1966 $64.3762
16+ $7.5460 $120.7360
24+ $7.3101 $175.4424
33+ $7.0744 $233.4552
43+ $6.8385 $294.0555
57+ $6.1311 $349.4727
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,400 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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