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Same model may have multiple batches, images only for reference.
IXFB40N110P Real Image
Same model may have multiple batches, images only for reference.

IXFB40N110P

Part No IXFB40N110P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1100V 40A PLUS264  /  N-Channel 1100 V 40A (Tc) 1250W (Tc) Through Hole PLUS264™
Datasheet
IXFB40N110P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 260mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 310 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 19000 pF @ 25 V
Power Dissipation (Max) 1250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS264™
Package / Case TO-264-3, TO-264AA
Base Product Number IXFB40
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 1021840-IXFB40N110P
Ultra Librarian 3D Model Ultra Librarian IXFB40N110P CAD Model

Description

The IXFB40N110P is a HiPerFET™ Polar N-Channel MOSFET transistor from IXYS, with a drain to source voltage (Vdss) of 1100 V and a continuous drain current (Id) of 40A (Tc) @ 25°C.

  • Drain to Source Voltage (Vdss): 1100 V
  • Continuous Drain Current (Id): 40A (Tc) @ 25°C
  • Maximum Rds On: 260mOhm @ 20A and 10V
  • Maximum Vgs(th): 6.5V @ 1mA
  • Package/Case: TO-264-3, TO-264AA
  • Product Type: Discrete Semiconductor (FETs, MOSFETs)
  • Mounting Type: Through-Hole
  • Power Dissipation: 1250W (Tc)
  • Input Capacitance (Ciss): 19000 pF @ 25 V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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