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IXFB52N90P

Name: IXFB52N90P
Brand: IXYS
SKU: 1324353
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IXFB52N90P
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 900V 52A PLUS264 / N-Channel 900 V 52A (Tc) 1250W (Tc) Through Hole PLUS264™
Datasheet	IXFB52N90P Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer	IXYS
Packaging	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	160mOhm @ 26A, 10V
Vgs(th) (Max) @ Id	6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	308 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	19000 pF @ 25 V
Power Dissipation (Max)	1250W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	Through Hole
Supplier Device Package	PLUS264™
Case / Package	TO-264-3, TO-264AA
Base Product Number	IXFB52
RoHS Status	ROHS3 Compliant
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	25
Win Source Part Number	1324353-IXFB52N90P
Ultra Librarian 3D Model	Ultra Librarian IXFB52N90P CAD Model

Alternative Products

Description

The IXYS IXFB52N90P is a N-channel MOSFET transistor that comes in a PLUS264™ package.

Drain to Source Voltage: 900V
Continuous Drain Current: 52A @ 25°C
Maximum On-Resistance: 160mOhm @ 26A and 10V
Gate Charge: 308nC @ 10V
Input Capacitance: 19000pF @ 25V
Power Dissipation: 1250W @ Tc
Mounting Type: through hole applications

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
2+	$47.6425	$95.2850
3+	$39.0913	$117.2739
4+	$37.8697	$151.4788
6+	$36.6481	$219.8886
8+	$35.4265	$283.4120
10+	$31.7617	$317.6170

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 50 pieces

MOQ: 2 pcs

Order Increment : 1 pcs

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