The IXYS MOSFET is a high-performance electronic component designed for use in discrete semiconductor products. It has a drain to source voltage (Vdss) of 600 V and a current - continuous drain (Id) @ 25°C of 82A (Tc).

• Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Power Dissipation (Max): 1250W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
• Vgs (Max): ±30V
• Package: TO-264-3, TO-264AA case
• Supplier Device Package: PLUS264™
• Mounting: through a hole
• Category: Discrete Semiconductor Products
• Applications: power supplies, motor control, and lighting systems