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Same model may have multiple batches, images only for reference.
IXFH12N100Q Real Image
Same model may have multiple batches, images only for reference.

IXFH12N100Q

Part No IXFH12N100Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 12A TO-247AD
Datasheet
IXFH12N100Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 4mA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 1.05 Ohm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049362-IXFH12N100Q
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFH12N100Q CAD Model

Description

The 1049362-IXFH12N100Q is an N-channel MOSFET with a drain-source breakdown voltage of 1000V and a continuous drain current of 12A (Tc). IXYS.

  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 12A (Tc)
  • Maximum Power Dissipation: 300W (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 4mA
  • Rds On: 1.05 Ohm @ 6A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Case/Package: TO-247AD (IXFH)
  • Supply and Demand Status: balance
  • Part Status: active
  • Popularity: medium

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