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Same model may have multiple batches, images only for reference.
IXFH16N50P3 Real Image
Same model may have multiple batches, images only for reference.

IXFH16N50P3

Part No IXFH16N50P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 16A TO-247
Datasheet
IXFH16N50P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 2.5mA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1515pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 360 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049382-IXFH16N50P3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian IXFH16N50P3 CAD Model

Description

The IXFH16N50P3 is an N-channel MOSFET transistor designed for use in electronic circuits that require high power and high voltage.

  • Drain-Source Breakdown Voltage: 500V
  • Drain Current: 16A
  • Package: TO-247AD
  • Mounting: Through-Hole
  • Gate Charge: 29nC @ 10V
  • Applications: Industrial and Automotive

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.0514 $60.5140
24+ $4.9653 $119.1672
37+ $4.8101 $177.9737
50+ $4.6550 $232.7500
65+ $4.4998 $292.4870
86+ $4.0343 $346.9498
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,310 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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