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Same model may have multiple batches, images only for reference.
IXFH20N80P Real Image
Same model may have multiple batches, images only for reference.

IXFH20N80P

Part No IXFH20N80P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description PolarHV HiPerFET Power MOSFET
Datasheet
IXFH20N80P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET, PolarHT
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs 86nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4685pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 500W (Tc)
Rds On (Maximum) @ Id, Vgs 520 mOhm @ 10A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247AD (IXFH)
Package TO-247-3
Win Source Part Number 1191058-IXFH20N80P
Manufacturer Homepage www.ixys.com
Family Name IXFH20N80P
Introduction Date May 07, 2006
ECCN EAR99
Estimated EOL Date 2024
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFH20N80P CAD Model

Description

The IXYS HiPerFET, PolarHT 1191058-IXFH20N80P is a MOSFET that is designed to provide high performance in a wide range of applications. The 1191058-IXFH20N80P is a IXYS HiPerFET, PolarHT and is manufactured by IXYS.

  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Family Name: IXFH20N80P
  • Mounting Type: Through Hole
  • Manufacturer Homepage: www.ixys.com
  • Win Source Part Number: 1191058-IXFH20N80P
  • Drain Source Voltage: 800V
  • Gate Charge (Qg) (maximum) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 4685pF @ 25V
  • Vgs(th) (Maximum) @ Id: 5V @ 4mA
  • Power Dissipation (maximum): 500W (Tc)
  • Rds On (Maximum) @ Id, Vgs: 520 mOhm @ 10A, 10V
  • Supply and Demand Status: Balanced

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