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Same model may have multiple batches, images only for reference.
IXFH36N50P Real Image
Same model may have multiple batches, images only for reference.

IXFH36N50P

Part No IXFH36N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 36A TO-247
Datasheet
IXFH36N50P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 93nC @ 10V
Max Input Capacitance 5500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 540W (Tc)
Maximum Rds On at Id,Vgs 170 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049422-IXFH36N50P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH36N50P CAD Model

Description

The IXYS 1049422-IXFH36N50P is an N-channel MOSFET that has a power dissipation of 540W (Tc).

  • Package: Tube/Rail
  • Mounting: Through-Hole
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 36A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 4mA
  • Maximum Gate Charge: 93nC @ 10V
  • Maximum Input Capacitance: 5500pF @ 25V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: TO-247AD (IXFH)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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