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Same model may have multiple batches, images only for reference.
IXFH60N20 Real Image
Same model may have multiple batches, images only for reference.

IXFH60N20

Part No IXFH60N20
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 60A TO-247
Datasheet
IXFH60N20 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 4mA
Max Gate Charge 155nC @ 10V
Max Input Capacitance 5200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 33 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049440-IXFH60N20
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH60N20 CAD Model

Description

The IXYS IXFH60N20 is an N-channel MOSFET transistor.

  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 200V
  • Power Dissipation (Max): 300W (Tc)
  • Current-Continuous Drain (Id): 60A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 30A, 10V
  • Gate-Charge (Qg): 155nC @ 10V
  • Input Capacitance (Ciss): 5200pF @ 25V

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