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Same model may have multiple batches, images only for reference.
IXFH75N10 Real Image
Same model may have multiple batches, images only for reference.

IXFH75N10

Part No IXFH75N10
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO-247AD
Datasheet
IXFH75N10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 4mA
Max Gate Charge 260nC @ 10V
Max Input Capacitance 4500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 37.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049451-IXFH75N10
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian IXFH75N10 CAD Model

Description

The IXFH75N10 is an N-channel MOSFET from IXYS that is designed for use in high-power applications.

  • Mounting: Through-Hole
  • Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 75A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 4mA
  • Maximum Rds On at Id, Vgs: 20 mOhm @ 37.5A, 10V
  • Maximum Gate Charge: 260nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $20.3732 $61.1196
6+ $16.7165 $100.2990
10+ $16.1941 $161.9410
13+ $15.6717 $203.7321
17+ $15.1493 $257.5381
23+ $13.5821 $312.3883
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 200 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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