The IXFK180N07 is a power MOSFET from IXYS, belonging to their PolarHV HiPerFET series. This N-channel MOSFET is designed for high-current, high-speed switching applications. It comes in a TO-264 package and is known for its low on-resistance and high avalanche energy capability.

Applications:

• Switch-mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• DC-DC converters
• Motor drives
• Solid-state relays

Features:

• Avalanche rated
• Low gate charge (Qg)
• High current handling capability
• Fast switching speeds
• Low on-resistance (RDS(on))

Benefits:

• Improved system efficiency due to low RDS(on)
• Reduced switching losses with fast switching speeds
• Enhanced system reliability with avalanche rating
• Simplified gate drive requirements with low gate charge
• High power density due to high current handling

Additional Details:

The IXFK180N07 features a drain-source voltage (Vdss) of 70V and a continuous drain current (Id) of 180A at a case temperature of 25°C. Its low on-resistance, typically around 4.8 milliohms, minimizes conduction losses, contributing to improved system efficiency. The fast switching speeds reduce switching losses, further enhancing efficiency. The avalanche rating ensures that the MOSFET can withstand transient voltage spikes, increasing system robustness. The low gate charge simplifies gate drive circuitry and reduces drive power requirements. The maximum operating junction temperature is typically 175°C. This device is commonly used in high-power applications where efficiency and reliability are critical. It provides an excellent combination of low on-resistance, fast switching speeds, and avalanche ruggedness.