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Same model may have multiple batches, images only for reference.
IXFK200N10P Real Image
Same model may have multiple batches, images only for reference.

IXFK200N10P

Part No IXFK200N10P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description Polar HiPerFET Power MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET, PolarP2
Packaging Bulk
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 235nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 7600pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 830W (Tc)
Rds On (Maximum) @ Id, Vgs 7.5 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-264AA (IXFK)
Package TO-264-3, TO-264AA
RoHS State Request Verification
Win Source Part Number 1191084-IXFK200N10P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFK200N10P
Introduction Date May 15, 2006
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXFK200N10P CAD Model

Description

The IXFK200N10P is a HiPerFET, PolarP2 MOSFET from IXYS.

  • Current Capacity: 200A (Tc)
  • Maximum Power Dissipation: 830W (Tc)
  • Channel Type: N-channel MOSFET
  • Drain-Source Voltage: 100V
  • Gate-Source Voltage: ±20V
  • Package: TO-264-3, TO-264AA package
  • Ideal for: Use in power management applications
  • Product Family: IXFK200N10P family
  • Category: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $48.9654 $97.9308
3+ $40.1768 $120.5304
4+ $38.9212 $155.6848
6+ $37.6657 $225.9942
7+ $36.4102 $254.8714
10+ $32.6436 $326.4360
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