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Same model may have multiple batches, images only for reference.
IXFK210N30X3 Real Image
Same model may have multiple batches, images only for reference.

IXFK210N30X3

Part No IXFK210N30X3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 210A TO264  /  N-Channel 300 V 210A (Tc) 1250W (Tc) Through Hole TO-264
Datasheet
IXFK210N30X3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Ultra X3
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 375 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 24200 pF @ 25 V
Power Dissipation (Max) 1250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-264
Package / Case TO-264-3, TO-264AA
Base Product Number IXFK210
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 1012826-IXFK210N30X3
Ultra Librarian 3D Model Ultra Librarian IXFK210N30X3 CAD Model

Description

The IXFK210N30X3 is an N-Channel MOSFET transistor from IXYS.

  • Series: HiPerFET™, Ultra X3
  • Drain to Source Voltage: 300V
  • Power Dissipation: 1250W (Tc)
  • Continuous Drain Current: 210A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Gate Threshold Voltage: 4.5V @ 8mA
  • Package: TO-264-3, TO-264AA
  • Mounting Type: Through Hole
  • Input Capacitance: 24200 pF @ 25V
  • Maximum On-State Resistance: 5.5mOhm @ 105A, 10V

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