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IXFN120N20

Name: IXFN120N20
Brand: IXYS
SKU: 608422
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXFN120N20
Manufacturer	IXYS
Catalog	FETs - Single
Description	HiPer FET Power MOSFETs \| MOSFET N-CH 200V 120A SOT-227B
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	200V
Id - Continuous Drain Current	120A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	17mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 8mA
Gate Charge (Qg) (Maximum) at Vgs	360nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	9100pF at 25V
Power Dissipation (Maximum)	600W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Chassis Mount
Supplier Device Package	SOT-227B
Manufacturer Package	SOT-227-4, miniBLOC
Manufacturer Pack Quantity	10
MSL Level	Not Applicable
Win Source Part Number	1191110-IXFN120N20
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXFN120N20 CAD Model

Alternative Products

Description

The IXYS electronic component is a MOSFET transistor with a maximum power dissipation of 600W manufactured by IXYS.

Win Source Part Number: 1191110-IXFN120N20
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200V
Maximum Continuous Drain Current: 120A
Maximum Gate-Source Voltage: ±20V
Gate Charge (Qg) (Maximum) @ Vgs: 360nC @ 10V

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