The IXYS HiPerFET™, Polar series IXFN200N10P is a MOSFET (Metal Oxide) transistor that has a FET type of N-Channel.

• Manufacturer: IXYS
• Product Name: IXFN200N10P
• Series: HiPerFET™, Polar
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 100 V
• Continuous Drain Current (Id) @ 25°C: 200A (Tc)
• Rds On (Max) @ Id, Vgs: 7.5mOhm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Power Dissipation (Max): 680W (Tc)
• Package: SOT-227-4, miniBLOC
• Packaging: Box
• Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
• Operating Temperature Range: -55°C ~ 175°C (TJ)