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IXFN38N100P

Name: IXFN38N100P
Brand: IXYS
SKU: 847370
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IXFN38N100P
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 1000V 38A SOT-227B
Datasheet	IXFN38N100P Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	HiPerFET™, Polar
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	210mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	350 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	24000 pF @ 25 V
Power Dissipation (Max)	1000W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC
Base Product Number	IXFN38
Standard Package	10 pcs
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	847370-IXFN38N100P
Ultra Librarian 3D Model	Ultra Librarian IXFN38N100P CAD Model

Alternative Products

Description

The IXFN38N100P is a N-Channel MOSFET transistor from the HiPerFET™ and Polar series by IXYS.

FET Type: N-Channel
FET Feature: Standard
Series: HiPerFET™, Polar
Vdss (Voltage Drain to Source): 1000 V
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 210mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power - Max: 1000W
Mounting Type: Chassis Mount
Package / Case: SOT-227-4 (miniBLOC)
Gate Charge (Qg) @ Vgs: 350 nC @ 10V
Input Capacitance (Ciss) @ Vds: 24000 pF @ 25V
Operating Temperature: -55°C ~ 150°C
REACH Status: REACH Compliant
Product Status: Active

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