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IXFN44N50U2

Name: IXFN44N50U2
Brand: IXYS
SKU: 608430
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXFN44N50U2
Manufacturer	IXYS
Catalog	FETs - Single
Description	HiPerFET Power MOSFETs \| MOSFET N-CH 500V 44A SOT-227B
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	500V
Id - Continuous Drain Current	44A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	120mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 8mA
Gate Charge (Qg) (Maximum) at Vgs	270nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	8400pF at 25V
Power Dissipation (Maximum)	520W
Temperature Range - Operating	-40°C ~ 150°C
Mounting Style	Chassis Mount
Supplier Device Package	SOT-227B
Manufacturer Package	SOT-227-4, miniBLOC
Manufacturer Pack Quantity	10
MSL Level	1 (Unlimited)
Win Source Part Number	1191118-IXFN44N50U2
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXFN44N50U2 CAD Model

Alternative Products

Description

The IXFN44N50U2 is a MOSFET featuring an N-channel transistor polarity by IXYS.

Designed for: Use in discrete semiconductor products
Drive Voltage: 10V
Maximum Power Dissipation: 520W
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current: 44A
Maximum On-State Resistance: 120mOhm @ 500mA and 10V
Gate-Source Voltage Threshold: 4V @ 8mA
Gate Charge: 270nC @ 10V
Package: SOT-227B package
Mounting: Chassis
Operating Temperature Range: -40°C to 150°C
Status: Obsolete

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