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IXFN48N50

Part No IXFN48N50
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 48A SOT-227B
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 48A
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 8mA
Max Gate Charge 270nC @ 10V
Max Input Capacitance 8400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 520W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Chassis Mount
Case / Package SOT-227B
Dimension SOT-227-4, miniBLOC
Win Source Part Number 018139-IXFN48N50
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFN48N50 CAD Model

Description

The IXYS IXFN48N50 is a N-Channel MOSFET semiconductor product that is manufactured by IXYS.

  • Popularity: High
  • Supply and Demand Status: Limited
  • Win Source Part Number: 018139-IXFN48N50
  • Applications: MOSFETs - Single
  • Power Dissipation (Max): 520W (Tc)
  • Continuous Drain Current @ 25°C: 48A
  • Drain-Source Breakdown Voltage: 500V
  • Gate-Source Threshold Voltage: 4V @ 8mA

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $50.1428 $50.1428
3+ $41.1429 $123.4287
4+ $39.8571 $159.4284
6+ $38.5714 $231.4284
7+ $37.2857 $260.9999
9+ $33.4286 $300.8574
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 94 pieces
Order Increment : 1 pcs
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