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Same model may have multiple batches, images only for reference.
IXFN64N60P Real Image
Same model may have multiple batches, images only for reference.

IXFN64N60P

Part No IXFN64N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 50A SOT227B  /  N-Channel 600 V 50A (Tc) 700W (Tc) Chassis Mount SOT-227B
Datasheet
IXFN64N60P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 96mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 25 V
Power Dissipation (Max) 700W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN64
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1038910-IXFN64N60P
Ultra Librarian 3D Model Ultra Librarian IXFN64N60P CAD Model

Description

The IXYS 1038910-IXFN64N60P is an N-channel MOSFET transistor that has a drain to source voltage (Vdss) of 600V.

  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id): 50A (Tc) @ 25°C
  • On-Resistance (Max): 96mOhm @ 500mA and 10V
  • Power Dissipation (Max): 700W (Tc)
  • Gate Charge (Qg) (Max): 200 nC @ 10V
  • Mounting Type: Chassis Mount
  • Package: SOT-227-4, miniBLOC

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