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Same model may have multiple batches, images only for reference.
IXFP10N80P Real Image
Same model may have multiple batches, images only for reference.

IXFP10N80P

Part No IXFP10N80P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 10A TO220AB / N-Channel 800 V 10A (Tc) 300W (Tc) Through Hole TO-220-3
Datasheet
IXFP10N80P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
Base Product Number IXFP10
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1323974-IXFP10N80P
Ultra Librarian 3D Model Ultra Librarian IXFP10N80P CAD Model

Description

The IXYS IXFP10N80P is a N-channel MOSFET transistor that comes in a TO-220-3 package.

  • Channel Type: N-channel
  • Package: TO-220-3
  • Drain to Source Voltage: 800V
  • Continuous Drain Current: 10A @ 25°C
  • Maximum On-Resistance: 1.1Ohm @ 5A and 10V
  • Gate Charge: 40nC @ 10V
  • Input Capacitance: 2050pF @ 25V
  • Power Dissipation: 300W @ Tc
  • Mounting Type: Through Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.4789 $58.2257
32+ $3.6750 $117.6000
49+ $3.5602 $174.4498
68+ $3.4454 $234.2872
87+ $3.3305 $289.7535
117+ $2.9859 $349.3503
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Availability: 3,000 pieces
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