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IXFP16N60P3

Part No IXFP16N60P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 16A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1.5mA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1830pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 347W (Tc)
Maximum Rds On at Id,Vgs 470 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1049504-IXFP16N60P3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXFP16N60P3 CAD Model

Description

The IXYS IXFP16N60P3 is an N-channel MOSFET transistor designed for high-speed switching applications.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 16A @ 25°C
  • On-Resistance: 470mΩ @ 500mA and 10V
  • Package: TO-220-3
  • Compliance: RoHS compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.0316 $50.3160
25+ $4.1285 $103.2125
38+ $3.9994 $151.9772
52+ $3.8704 $201.2608
67+ $3.7414 $250.6738
90+ $3.3544 $301.8960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,544 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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