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IXFP22N65X2M

Part No IXFP22N65X2M
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 22A TO220 / N-Channel 650 V 22A (Tc) 37W (Tc) Through Hole TO-220 Isolated Tab
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Ultra X2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 145mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2190 pF @ 25 V
Power Dissipation (Max) 37W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Isolated Tab
Package / Case TO-220-3 Full Pack, Isolated Tab
Base Product Number IXFP22
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1007025-IXFP22N65X2M
Ultra Librarian 3D Model Ultra Librarian IXFP22N65X2M CAD Model

Description

The IXFP22N65X2M is an N-channel MOSFET transistor of the HiPerFET™, Ultra X2 series manufactured by IXYS. It has a drain to source voltage of 650V and a continuous drain current of 22A (Tc).

  • Transistor Type: N-Channel MOSFET
  • Series: HiPerFET™, Ultra X2
  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 22A (Tc)
  • Mounting Type: Through Hole
  • Package/Case: TO-220-3 Full Pack, Isolated Tab
  • Operating Temperature: -55°C ~ 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4792 $52.0632
50+ $2.0342 $101.7100
77+ $1.9707 $151.7439
105+ $1.9071 $200.2455
136+ $1.8435 $250.7160
182+ $1.6528 $300.8096
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,320 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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