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Same model may have multiple batches, images only for reference.
IXFP60N25X3 Real Image
Same model may have multiple batches, images only for reference.

IXFP60N25X3

Part No IXFP60N25X3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 60A TO220AB / N-Channel 250 V 60A (Tc) 320W (Tc) Through Hole TO-220AB (IXFP)
Datasheet
IXFP60N25X3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Ultra X3
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3610 pF @ 25 V
Power Dissipation (Max) 320W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB (IXFP)
Package / Case TO-220-3
Base Product Number IXFP60
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1349114-IXFP60N25X3
Ultra Librarian 3D Model Ultra Librarian IXFP60N25X3 CAD Model

Description

The IXFP60N25X3 is a N-channel MOSFET transistor from IXYS.

  • Drain to Source Voltage: 250 V
  • Continuous Drain Current: 60A @ 25°C
  • Series: HiPerFET™, Ultra X3
  • Package: TO-220-3
  • Maximum Power Dissipation: 320W @ 25°C (Case Temperature)

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Quantity Unit Price Ext. Price
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21+ $4.8772 $102.4212
32+ $4.7248 $151.1936
44+ $4.5724 $201.1856
57+ $4.4199 $251.9343
76+ $3.9627 $301.1652
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Availability: 1,000 pieces
MOQ: 9 pcs
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